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MBRD620CTG Series, NRVBD640CTG Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MBRD/NRVBD/SBR
Unit
620CT
630CT
640CT
650CT
660CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
20
30
40
50
60
V
Average Rectified Forward Current
TC
= 130
°C (Rated VR)
Per Diode
Per Device
IF(AV)
3
6
A
Peak Repetitive Forward Current,
TC
= 130
°C (Rated VR, Square Wave, 20 kHz)
Per Diode
IFRM
6
A
Nonrepetitive Peak Surge Current ?
(Surge applied at rated load
conditions halfwave, single phase, 60 Hz)
IFSM
75
A
Peak Repetitive Reverse Surge Current (2 s, 1 kHz)
IRRM
1
A
Operating Junction Temperature (Note 1)
TJ
?65 to +175
°C
Storage Temperature
Tstg
?65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
THERMAL CHARACTERISTICS PER DIODE
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance, Junction?to?Case
RJC
6
°C/W
Maximum Thermal Resistance, Junction?to?Ambient (Note 2)
RJA
80
°C/W
2. Rating applies when surface mounted on the minimum pad size recommended.
ELECTRICAL CHARACTERISTICS PER DIODE
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
iF
= 3 Amps, T
C
= 25
°C
iF
= 3 Amps, T
C
= 125
°C
iF
= 6 Amps, T
C
= 25
°C
iF
= 6 Amps, T
C
= 125
°C
VF
0.7
0.65
0.9
0.85
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TC
= 25
°C)
(Rated dc Voltage, TC
= 125
°C)
iR
0.1
15
mA
3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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